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BSS316N H6327

Part No BSS316N H6327
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 16+
Reference case SOT23-3
Manufacturer Infineon Technologies
Manufacturer Homepage www.infineon.com
Win Source Part Number 737460-BSS316N H6327
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BSS316N H6327 CAD Model

Description

The BSS316N H6327 is a N-channel enhancement mode MOSFET from Infineon Technologies, designed for high-efficiency power switching applications. This MOSFET is part of Infineon's extensive portfolio of power semiconductors, offering a compelling combination of low on-state resistance (RDS(on)) and fast switching speeds. Its optimized design contributes to reduced power losses and improved thermal performance, making it suitable for various demanding applications.

Applications:

  • DC-DC converters
  • Load switches
  • Power management in portable devices
  • LED lighting
  • Motor control circuits

Features:

  • N-Channel enhancement mode
  • Logic level driving
  • Low on-state resistance (RDS(on))
  • Fast switching speed
  • Avalanche rated
  • Pb-free lead finishing; RoHS compliant

Benefits:

  • High efficiency: Reduced RDS(on) minimizes conduction losses, leading to improved energy efficiency.
  • Compact design: Suitable for space-constrained applications due to its small footprint.
  • Improved thermal performance: Enables operation at higher power levels without compromising reliability.
  • Simplified driving circuitry: Logic level compatibility allows for direct driving from microcontrollers and other logic devices.
  • Robustness: Avalanche rating ensures reliable operation under transient conditions.

The BSS316N H6327 is typically supplied in a SOT-23 package. This surface-mount package facilitates efficient heat dissipation and simplifies board assembly. The device's electrical characteristics are optimized for operation at relatively low gate voltages, making it compatible with a wide range of driver circuits. Its low gate charge contributes to faster switching speeds and reduced gate drive losses.

Technical Specifications (typical values):

  • Drain-Source Voltage (VDS): 30 V
  • Gate-Source Voltage (VGS): ±20 V
  • Continuous Drain Current (ID): 6.7 A
  • On-State Resistance (RDS(on)): 22 mΩ (at VGS = 10 V)
  • Total Gate Charge (Qg): 6.2 nC

The BSS316N H6327 MOSFET offers a compelling solution for a wide range of power switching applications where efficiency, size, and reliability are critical considerations. Its excellent electrical characteristics and robust design make it a popular choice among design engineers.

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.4366 $50.2090
280+ $0.3583 $100.3240
435+ $0.3471 $150.9885
600+ $0.3359 $201.5400
770+ $0.3247 $250.0190
1,035+ $0.2911 $301.2885
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 42,055 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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