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Same model may have multiple batches, images only for reference.
BSS7728NL6327HTSA1 Real Image
Same model may have multiple batches, images only for reference.

BSS7728NL6327HTSA1

Part No BSS7728NL6327HTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 200MA SOT-23
Datasheet
BSS7728NL6327HTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 26μA
Max Gate Charge 1.5nC @ 10V
Max Input Capacitance 56pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 360mW (Ta)
Maximum Rds On at Id,Vgs 5 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1024529-BSS7728NL6327HTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSS7728NL6327HTSA1 CAD Model

Description

The Infineon Technologies BSS7728NL6327HTSA1 is an N-channel MOSFET with a maximum power dissipation of 360mW (Ta).

  • Power Dissipation: 360mW (Ta)
  • Mounting: Surface-mount
  • Package: PG-SOT23-3
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 200mA (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 2.3V @ 26μA
  • Maximum Gate Charge: 1.5nC @ 10V
  • Status: Obsolete (EOL)
  • Popularity: Medium

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Quantity Unit Price Ext. Price
845+ $0.0684 $57.7980
2,060+ $0.0561 $115.5660
3,185+ $0.0544 $173.2640
4,390+ $0.0527 $231.3530
5,670+ $0.0510 $289.1700
7,595+ $0.0457 $347.0915
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Availability: 9,690 pieces
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