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BSZ035N03MS G Infineon Technologies BSZ035N03MS G Real Image BSZ035N03MS G real image BSZ035N03MS G Real Image1 BSZ035N03MS G Real Image2 BSZ035N03MS G Real Image3 BSZ035N03MS G Real Image4 BSZ035N03MS G Real Image5
Same model may have multiple batches, images only for reference.
BSZ035N03MS G Infineon Technologies BSZ035N03MS G Real Image BSZ035N03MS G real image BSZ035N03MS G Real Image1 BSZ035N03MS G Real Image2 BSZ035N03MS G Real Image3 BSZ035N03MS G Real Image4 BSZ035N03MS G Real Image5
BSZ035N03MS G Infineon Technologies BSZ035N03MS G Real Image BSZ035N03MS G real image BSZ035N03MS G Real Image1 BSZ035N03MS G Real Image2 BSZ035N03MS G Real Image3 BSZ035N03MS G Real Image4 BSZ035N03MS G Real Image5
Same model may have multiple batches, images only for reference.

BSZ035N03MS G

Part No BSZ035N03MS G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 30V 18A 8-Pin TSDSON EP T/R / MOSFET N-CH 30V 40A TSDSON-8
Datasheet
BSZ035N03MS G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 18A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 74nC @ 10V
Max Input Capacitance 5700pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.1W (Ta), 69W (Tc)
Maximum Rds On at Id,Vgs 3.5 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TSDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 012171-BSZ035N03MS G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name BSZ035N03MS
Introduction Date October 29, 2007
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian BSZ035N03MS G CAD Model

Description

BSZ035N03MS G

The BSZ035N03MS G is an advanced MOSFET that caters to applications needing fast switching and superior efficiency. It is a perfect fit for compact, high-performance designs.

  • Telecommunication Equipment
  • Voltage Regulation Modules
  • Automotive Electronics
  • Power Distribution Units

Features and Benefits:

  • Fast Transition Times: Facilitates high-speed operations and low delay.
  • Small Form Factor: Perfect for compact circuitries and applications with space constraints.
  • Optimized for Efficiency: Offers reduced power dissipation for energy-saving applications.

Additional Details: This component is specifically designed to minimize electromagnetic interference, allowing for smoother operation in sensitive electronic ecosystems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.6547 $52.3760
190+ $0.5372 $102.0680
290+ $0.5204 $150.9160
400+ $0.5036 $201.4400
515+ $0.4868 $250.7020
690+ $0.4365 $301.1850
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Availability: 99,690 pieces
MOQ: 80 pcs
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