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BSZ037N06LS5ATMA1

Part No BSZ037N06LS5ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 18A/40A TSDSON / N-Channel 60 V 18A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8-FL
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 18A (Ta) , 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.3V @ 36µA
Gate Charge (Qg) (Max) @ Vgs 47 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3100 pF @ 30 V
Power Dissipation (Max) 2.1W (Ta) , 69W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TSDSON-8-FL
Package / Case 8-PowerTDFN
Base Product Number BSZ037
Standard Package 5,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1338034-BSZ037N06LS5ATMA1
Ultra Librarian 3D Model Ultra Librarian BSZ037N06LS5ATMA1 CAD Model

Description

The Infineon OptiMOS™ BSZ037N06LS5ATMA1 MOSFET is an N-channel device that features a drain-to-source voltage of 60V and a power dissipation of 2.1W (Ta) and 69W (Tc).

  • Package: 8-PowerTDFN
  • Standard Package: 5,000
  • Vgs (Max): ±20V
  • Temperature Range: -55°C to 150°C (TJ)

The device is suitable for use in various applications, including power management, motor control, and lighting.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0000 $60.0000
145+ $0.8205 $118.9725
220+ $0.7949 $174.8780
305+ $0.7692 $234.6060
390+ $0.7436 $290.0040
520+ $0.6667 $346.6840
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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