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BSZ088N03MSG

Part No BSZ088N03MSG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description BSZ088N03 - 12V-300V N-CHANNEL P / N-Channel 30 V 11A (Ta), 50A (Tc) 2.1W (Ta), 35W (Tc) Surface Mount PG-TSDSON-8
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™3M
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2100 pF @ 15 V
Power Dissipation (Max) 2.1W (Ta), 35W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TSDSON-8
Package / Case 8-PowerTDFN
Standard Package 1 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 572313-BSZ088N03MSG
Ultra Librarian 3D Model Ultra Librarian BSZ088N03MSG CAD Model

Description

The BSZ088N03MSG is an N-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) from the OptiMOS™3M series.

  • Type: N-channel MOSFET
  • Series: OptiMOS™3M
  • Drain-to-Source Voltage: 30V
  • Continuous Drain Current: 11A @ 25°C
  • On-Resistance: 8mOhm @ 20A, 10V
  • Gate Threshold Voltage: 2V
  • Mounting Type: Surface Mount
  • Package: 8-PowerTDFN

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.7041 $52.8075
175+ $0.5778 $101.1150
270+ $0.5597 $151.1190
370+ $0.5417 $200.4290
480+ $0.5236 $251.3280
640+ $0.4695 $300.4800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,248 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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