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Same model may have multiple batches, images only for reference.
BTS113ANKSA1 Real Image
Same model may have multiple batches, images only for reference.

BTS113ANKSA1

Part No BTS113ANKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 11.5A TO-220AB
Datasheet
BTS113ANKSA1 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Input Capacitance 560pF @ 25V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 170 mOhm @ 5.8A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package P-TO220AB
Dimension TO-220-3
Win Source Part Number 1024849-BTS113ANKSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BTS113ANKSA1 CAD Model

Description

The Infineon Technologies BTS113ANKSA1 is an N-Channel MOSFET with a drain-source breakdown voltage of 60V and continuous drain current of 11.5A at 25°C.

  • Power Dissipation: 40W (Tc)
  • Maximum Rds On: 170 mOhm @ 5.8A, 4.5V
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Maximum Input Capacitance: 560pF @ 25V
  • Package: P-TO220AB

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5486 $61.9440
95+ $1.2707 $120.7165
145+ $1.2310 $178.4950
195+ $1.1913 $232.3035
255+ $1.1517 $293.6835
340+ $1.0325 $351.0500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 27,600 pieces
MOQ: 40 pcs
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