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Same model may have multiple batches, images only for reference.
BTS247ZE3062AATMA2 Real Image
Same model may have multiple batches, images only for reference.

BTS247ZE3062AATMA2

Part No BTS247ZE3062AATMA2
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 33A TO220-5
Datasheet
BTS247ZE3062AATMA2 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 90μA
Max Gate Charge 90nC @ 10V
Max Input Capacitance 1730pF @ 25V
Maximum Gate-Source Voltage ±20V
FET Feature Temperature Sensing Diode
Power Dissipation (Max) 120W (Tc)
Maximum Rds On at Id,Vgs 18 mOhm @ 12A, 10V
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-5
Dimension TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
Win Source Part Number 1024861-BTS247ZE3062AATMA2
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BTS247ZE3062AATMA2 CAD Model

Description

The Infineon Technologies BTS247ZE3062AATMA2 is an N-Channel MOSFET with a drain-source breakdown voltage of 55V and a continuous drain current of 33A @ 25°C.

  • Maximum Power Dissipation: 120W (Tc)
  • Maximum Rds On: 18 mOhm @ Id,Vgs of 12A, 10V
  • Package: PG-TO263-5
  • FET Feature: Temperature sensing diode
  • Gate-Source Threshold Voltage: 2V @ 90μA
  • Maximum Gate Charge: 90nC @ 10V
  • Maximum Input Capacitance: 1730pF @ 25V
  • Application: Suitable for use in applications such as power supplies, DC-DC converters, and motor control

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $48.2626 $96.5252
3+ $39.6001 $118.8003
5+ $38.3626 $191.8130
7+ $37.1251 $259.8757
9+ $35.8876 $322.9884
11+ $32.1751 $353.9261
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