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Same model may have multiple batches, images only for reference.
BTS282ZE3230 Real Image
Same model may have multiple batches, images only for reference.

BTS282ZE3230

Part No BTS282ZE3230
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series TEMPFET®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 49 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.5mOhm @ 36A, 10V
Vgs(th) (Max) @ Id 2V @ 240µA
Gate Charge (Qg) (Max) @ Vgs 232 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4800 pF @ 25 V
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-7-12
Package / Case TO-220-7
Standard Package 19 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 864869-BTS282ZE3230
Ultra Librarian 3D Model Ultra Librarian BTS282ZE3230 CAD Model

Description

The 864869-BTS282ZE3230 is a N-Channel MOSFET from Infineon Technologies.

  • Series: TEMPFET
  • Application: Discrete Semiconductor
  • Transistor Type: MOSFET
  • Drain to Source Voltage (Vdss): 49V
  • Continuous Drain Current (Id): 80A @ 25°C
  • Rds On (Max): 6.5mOhm @ 36A and 10V
  • Gate Charge (Qg): 232nC @ 10V
  • Input Capacitance (Ciss): 4800pF @ 25V
  • Power Dissipation: 300W
  • Package: TO-220-7
  • Mounting Type: Through-Hole
  • Operating Temperature Range: -40°C to 175°C

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1+ $58.7549 $58.7549
3+ $48.2097 $144.6291
4+ $46.7024 $186.8096
6+ $45.1963 $271.1778
7+ $43.6902 $305.8314
9+ $39.1695 $352.5255
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