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Same model may have multiple batches, images only for reference.
BUZ73HXKSA1 Real Image
Same model may have multiple batches, images only for reference.

BUZ73HXKSA1

Part No BUZ73HXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 7A TO220-3
Datasheet
BUZ73HXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Input Capacitance 530pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 400 mOhm @ 4.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 1025473-BUZ73HXKSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BUZ73HXKSA1 CAD Model

Description

The Infineon Technologies BUZ73HXKSA1 is an N-Channel MOSFET transistor designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 40W (Tc)
  • Drain-Source Breakdown Voltage: 200V
  • Mounting Type: Through Hole
  • Package: PG-TO-220-3
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Rds On at Id,Vgs: 400 mOhm @ 4.5A, 10V

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