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FS215R04A1E3DBOMA1

Part No FS215R04A1E3DBOMA1
Manufacturer Infineon Technologies
Catalog IGBTs - Modules
Description IGBT MODULE / IGBT Module
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules
Mfr Infineon Technologies
Series *
Package Tray
Product Status Discontinued
Standard Package 16 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1051976-FS215R04A1E3DBOMA1
Ultra Librarian 3D Model Ultra Librarian FS215R04A1E3DBOMA1 CAD Model

Description

The FS215R04A1E3DBOMA1 is an IGBT module manufactured by Infineon Technologies. This module is part of Infineon's EconoDUAL™ 3 family, designed for industrial applications requiring efficient power conversion and reliable performance. It integrates multiple IGBTs (Insulated Gate Bipolar Transistors) and diodes in a single package, optimizing space and simplifying system design.

Applications:

  • Industrial Drives: Used in variable frequency drives (VFDs) to control the speed and torque of electric motors in industrial machinery.
  • Servo Drives: Employed in servo motor control systems for precise positioning and motion control.
  • Renewable Energy Systems: Utilized in inverters for solar and wind power generation to convert DC power to AC power.
  • Uninterruptible Power Supplies (UPS): Integrated into UPS systems to provide backup power during power outages.
  • Welding Equipment: Used in welding machines to control the welding current and voltage.
  • Power Supplies: Incorporated in high-power power supplies for various industrial applications.

Features:

  • EconoDUAL™ 3 Package: Compact and robust package design for easy mounting and efficient heat dissipation.
  • IGBT4 Chip Technology: Latest generation IGBT technology for improved efficiency and reduced switching losses.
  • Trench Fieldstop Technology: Optimizes the trade-off between on-state voltage and switching losses.
  • Integrated Temperature Sensor: Allows for accurate temperature monitoring to prevent overheating and ensure reliable operation.
  • Low Inductance Design: Minimizes voltage overshoot and ringing during switching, improving EMI performance.
  • PressFIT Contact Technology: Simplifies assembly and provides reliable electrical connections.

Benefits:

  • High Efficiency: Reduces energy consumption and operating costs due to the low switching losses of the IGBT4 chip.
  • Increased Power Density: Compact package design allows for higher power output in a smaller footprint.
  • Improved Reliability: Robust design and integrated temperature sensor ensure reliable operation in demanding industrial environments.
  • Simplified System Design: Integrated module simplifies the design and assembly of power electronic systems.
  • Reduced EMI: Low inductance design minimizes electromagnetic interference, improving system performance.
  • Cost-Effective: Optimized design and efficient manufacturing processes result in a cost-effective solution.

Additional Details:

The FS215R04A1E3DBOMA1 module typically features a blocking voltage of 650V and a continuous collector current of 215A (at specific operating conditions). It includes an NTC thermistor for temperature monitoring and utilizes an aluminum nitride (AlN) substrate for enhanced thermal performance. The module's internal structure consists of several IGBTs and diodes connected in a specific configuration to achieve the desired power handling capabilities. Detailed datasheets provided by Infineon specify parameters such as maximum junction temperature, gate charge, and thermal resistance, crucial for proper system design and operation.

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