IMW65R057M1HXKSA1

Part No IMW65R057M1HXKSA1
Manufacturer Infineon Technologies
Catalog FETs - Single
Description SILICON CARBIDE MOSFET, PG-TO247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Win Source Part Number WS1202687-IMW65R057M1HXKSA1
Manufacturer Infineon Technologies
Category Discrete Semiconductor Products Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Series CoolSiC™
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole

Description

The Infineon Technologies CoolSiC™ N-Channel MOSFET is a high-performance discrete semiconductor product designed for various applications. With a drain to source voltage (Vdss) of 650 V, this MOSFET offers reliable and efficient operation. It operates within a wide temperature range of -55°C to 175°C, making it suitable for demanding environments. The SiCFET (Silicon Carbide) technology used in this MOSFET ensures high power density and low switching losses. The through-hole mounting type allows for easy installation and secure connections. Whether you need to drive motors, control power supplies, or regulate current in your electronic circuits, the Infineon Technologies CoolSiC™ N-Channel MOSFET is a reliable and efficient choice.

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