The Infineon Technologies CoolSiC™ N-Channel MOSFET is a high-performance discrete semiconductor product designed for various applications. With a drain to source voltage (Vdss) of 650 V, this MOSFET offers reliable and efficient operation. It operates within a wide temperature range of -55°C to 175°C, making it suitable for demanding environments. The SiCFET (Silicon Carbide) technology used in this MOSFET ensures high power density and low switching losses. The through-hole mounting type allows for easy installation and secure connections. Whether you need to drive motors, control power supplies, or regulate current in your electronic circuits, the Infineon Technologies CoolSiC™ N-Channel MOSFET is a reliable and efficient choice.