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IMW65R057M1HXKSA1

Part No IMW65R057M1HXKSA1
Manufacturer Infineon Technologies
Catalog FETs - Single
Description SILICON CARBIDE MOSFET, PG-TO247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Win Source Part Number WS1202687-IMW65R057M1HXKSA1
Manufacturer Infineon Technologies
Category Discrete Semiconductor Products Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Series CoolSiC™
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Ultra Librarian 3D Model Ultra Librarian IMW65R057M1HXKSA1 CAD Model

Description

The Infineon Technologies CoolSiC™ N-Channel MOSFET is a high-performance discrete semiconductor product designed for various applications.

  • Drain to Source Voltage (Vdss): 650 V
  • Temperature Range: -55°C to 175°C
  • Technology: SiCFET (Silicon Carbide)
  • Mounting Type: through-hole

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