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Same model may have multiple batches, images only for reference.
IPA040N06N Infineon Technologies
Same model may have multiple batches, images only for reference.

IPA040N06N

Part No IPA040N06N
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V TO220-3
Datasheet
IPA040N06N Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 69A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.3V @ 50μA
Max Gate Charge 44nC @ 10V
Max Input Capacitance 3375pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 36W (Tc)
Maximum Rds On at Id,Vgs 4 mOhm @ 69A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-FP
Dimension TO-220-3 Full Pack
Win Source Part Number 205210-IPA040N06N
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPA040N06N CAD Model

Description

The Infineon Technologies IPA040N06N is an N-channel MOSFET component that is designed for use in a range of applications. This component is manufactured by Infineon Technologies and has a Win Source Part Number of 205210-IPA040N06N. It is a medium-popularity component with a limited supply and demand status. The IPA040N06N is a reliable component that can be used in a range of electronic devices. It has a power dissipation of 36W (Tc) and a maximum drain-source breakdown voltage of 60V.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.7221 $60.2735
85+ $1.4137 $120.1645
130+ $1.3687 $177.9310
175+ $1.3248 $231.8400
230+ $1.2809 $294.6070
305+ $1.1481 $350.1705
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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