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IPA60R120P7XKSA1

Part No IPA60R120P7XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 26A TO220 / N-Channel 600 V 26A (Tc) 28W (Tc) Through Hole PG-TO220 Full Pack
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 120mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id 4V @ 410µA
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1544 pF @ 400 V
Power Dissipation (Max) 28W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Through Hole
Supplier Device Package PG-TO220 Full Pack
Case / Package TO-220-3 Full Pack
Base Product Number IPA60R
RoHS Status ROHS3 Compliant
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 2156-IPA60R120P7XKSA1,IFEINFIPA60R120P7XKSA1,SP001658376
Standard Package 50
Win Source Part Number 1325380-IPA60R120P7XKSA1
Ultra Librarian 3D Model Ultra Librarian IPA60R120P7XKSA1 CAD Model

Description

The IPA60R120P7XKSA1 is a high-performance N-channel MOSFET transistor manufactured by Infineon Technologies.

  • Package: TO-220-3 Full Pack
  • Standard Package: 50
  • Vdss: 600 V
  • Id: 26A (Tc)
  • Rds On (Max): 120mOhm @ 8.2A, 10V
  • Qg (Max): 36 nC @ 10 V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • ROHS3 Compliant: Yes

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Pricing & Ordering

Quantity Unit Price Ext. Price
21+ $2.3881 $50.1501
52+ $1.9595 $101.8940
80+ $1.8983 $151.8640
109+ $1.8370 $200.2330
141+ $1.7758 $250.3878
189+ $1.5921 $300.9069
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20 pieces
MOQ: 21 pcs
Order Increment : 1 pcs
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