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IPA60R125C6

Part No IPA60R125C6
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 30A TO220-FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 960μA
Max Gate Charge 96nC @ 10V
Max Input Capacitance 2127pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 34W (Tc)
Maximum Rds On at Id,Vgs 125 mOhm @ 14.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-FP
Dimension TO-220-3 Full Pack
Win Source Part Number 068939-IPA60R125C6
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPA60R125C6 CAD Model

Description

The Infineon Technologies IPA60R125C6 is a N-channel MOSFET transistor that is ideal for use in various applications that require high-performance N-channel MOSFET transistors. It features a drain-source breakdown voltage of 600 V, a continuous drain current of 30 A (Tc), and a maximum Rds On of 125 mOhm @ 14.5A, 10V. This MOSFET transistor is through-hole mountable and comes in a PG-TO-220-FP package. With a limited supply and demand status, this product is a popular choice for designers and engineers.

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $4.9241 $54.1651
25+ $4.0403 $101.0075
39+ $3.9141 $152.6499
53+ $3.7878 $200.7534
69+ $3.6616 $252.6504
92+ $3.2828 $302.0176
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,000 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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