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Same model may have multiple batches, images only for reference.
IPA60R170CFD7XKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPA60R170CFD7XKSA1

Part No IPA60R170CFD7XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 8A TO220 / N-Channel 650 V 8A (Tc) 26W (Tc) Through Hole PG-TO220-FP
Datasheet
IPA60R170CFD7XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™ CFD7
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 170mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1199 pF @ 400 V
Power Dissipation (Max) 26W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-FP
Package / Case TO-220-3 Full Pack
Base Product Number IPA60R
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1341416-IPA60R170CFD7XKSA1
Ultra Librarian 3D Model Ultra Librarian IPA60R170CFD7XKSA1 CAD Model

Description

The Infineon Technologies IPA60R170CFD7XKSA1 is an N-channel MOSFET transistor, part number 1341416.

  • Series: CoolMOS™ CFD7
  • Package: Tube
  • Drain-to-Source Voltage (Vdss): 650V
  • Maximum Power Dissipation: 26W (Tc)
  • Mounting Type: Through-Hole
  • Package/Case: TO-220-3 Full Pack
  • Voltage Supply: ±20V
  • Operating Temperature: -55°C to 150°C

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