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Same model may have multiple batches, images only for reference.
IPA60R190P6 Real Image
Same model may have multiple batches, images only for reference.

IPA60R190P6

Part No IPA60R190P6
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 9.5A TO220-FP
Datasheet
IPA60R190P6 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 630μ
Max Gate Charge 37nC @ 10V
Max Input Capacitance 1750pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 34W (Tc)
Maximum Rds On at Id,Vgs 190 mOhm @ 7.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-FP
Dimension TO-220-3 Full Pack
Win Source Part Number 040626-IPA60R190P6
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPA60R190P6 CAD Model

Description

The Infineon Technologies IPA60R190P6 is a N-Channel MOSFET transistor that can be mounted through a hole.

  • Power Dissipation: 34W (Tc)
  • Maximum Drive Voltage: 10V
  • Maximum Rds On: 190 mOhm @ Id, Vgs of 7.6A, 10V
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current at 25°C: 20.2A (Tc)
  • Gate-Source Threshold Voltage: 4.5V @ 630μA
  • Maximum Gate Charge: 37nC @ 10V
  • Maximum Input Capacitance: 1750pF @ 100V
  • Maximum Gate-Source Voltage: ±20V
  • Category: Discrete Semiconductor Products
  • Status: Active
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8271 $53.7615
130+ $0.7748 $100.7240
205+ $0.7486 $153.4630
290+ $0.6963 $201.9270
375+ $0.6701 $251.2875
470+ $0.6439 $302.6330
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Availability: 20,775 pieces
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