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Same model may have multiple batches, images only for reference.
IPA60R299CP Real Image
Same model may have multiple batches, images only for reference.

IPA60R299CP

Part No IPA60R299CP
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 11A TO220-3
Datasheet
IPA60R299CP Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 440μA
Max Gate Charge 29nC @ 10V
Max Input Capacitance 1100pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 33W (Tc)
Maximum Rds On at Id,Vgs 299 mOhm @ 6.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-FP
Dimension TO-220-3 Full Pack
Win Source Part Number 068947-IPA60R299CP
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPA60R299CP CAD Model

Description

The Infineon Technologies 068947-IPA60R299CP is an N-channel MOSFET with a drain-source breakdown voltage of 600V and a continuous drain current of 11A @ 25°C.

  • Maximum Power Dissipation: 33W
  • Gate-Source Threshold Voltage: 3.5V @ 440μA
  • Maximum Gate Charge: 29nC @ 10V
  • Maximum Input Capacitance: 1100pF @ 100V
  • Operating Temperature Range: -55°C to 150°C
  • Package: PG-TO-220-FP
  • Category: Discrete Semiconductor Products
  • Popularity: Medium

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