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Same model may have multiple batches, images only for reference.
IPA60R600E6 Real Image
Same model may have multiple batches, images only for reference.

IPA60R600E6

Part No IPA60R600E6
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 7.3A TO220
Datasheet
IPA60R600E6 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 200μA
Max Gate Charge 20.5nC @ 10V
Max Input Capacitance 440pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 28W (Tc)
Maximum Rds On at Id,Vgs 600 mOhm @ 2.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-FP
Dimension TO-220-3 Full Pack
Win Source Part Number 068953-IPA60R600E6
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPA60R600E6 CAD Model

Description

The Infineon Technologies IPA60R600E6 is a N-Channel MOSFET transistor with a drain-source breakdown voltage of 600V and a continuous drain current of 7.3A @ 25°C.

  • Design: For use in discrete semiconductor products
  • Power Dissipation: 28W (Tc)
  • Mounting: Through a hole
  • Package: PG-TO-220-FP case
  • Gate-Source Threshold Voltage: 3.5V @ 200μA
  • Maximum Rds On at Id,Vgs: 600 mOhm @ 2.4A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9794 $58.7640
145+ $0.8039 $116.5655
225+ $0.7785 $175.1625
310+ $0.7542 $233.8020
400+ $0.7288 $291.5200
535+ $0.6537 $349.7295
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Availability: 44,061 pieces
MOQ: 60 pcs
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