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Same model may have multiple batches, images only for reference.
IPA65R110CFD Infineon Technologies
Same model may have multiple batches, images only for reference.

IPA65R110CFD

Part No IPA65R110CFD
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 31.2A TO220
Datasheet
IPA65R110CFD Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 31.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 1.3mA
Max Gate Charge 118nC @ 10V
Max Input Capacitance 3240pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 34.7W (Tc)
Maximum Rds On at Id,Vgs 110 mOhm @ 12.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220 Full Pack
Dimension TO-220-3 Full Pack
Win Source Part Number 205215-IPA65R110CFD
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPA65R110CFD CAD Model

Description

The Infineon Technologies IPA65R110CFD is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current: 31.2A @ 25°C
  • Operating Temperature Range: -55°C to 150°C
  • Package: PG-TO220 full pack
  • Maximum Rds On at Id,Vgs: 110 mOhm @ 12.7A, 10V
  • Common Use: Common-used
  • Popularity: High

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15+ $10.6481 $159.7215
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33+ $9.1269 $301.1877
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