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Same model may have multiple batches, images only for reference.
IPA65R125C7 Real Image
Same model may have multiple batches, images only for reference.

IPA65R125C7

Part No IPA65R125C7
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description IPA65R125 - 650V AND 700V COOLMO
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id 4V @ 440µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1670 pF @ 400 V
Power Dissipation (Max) 32W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220 Full Pack
Package / Case TO-220-3 Full Pack
Standard Package 1 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 603305-IPA65R125C7
Ultra Librarian 3D Model Ultra Librarian IPA65R125C7 CAD Model

Description

The 603305-IPA65R125C7 is a high-performance N-channel MOSFET transistor from Infineon Technologies.

  • Series: CoolMOS™
  • Drain-to-Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 10A @ 25°C
  • Rds On (Max): 125mOhm @ 8.9A and 10V
  • Gate Charge (Qg): 35nC @ 10V
  • Input Capacitance (Ciss): 1670pF @ 400V
  • Operating Temperature: -55°C to 150°C
  • Mounting: through-hole
  • Package: TO-220-3 Full Pack
  • Manufacturer: Infineon Technologies

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.5256 $53.3960
80+ $1.2518 $100.1440
125+ $1.2127 $151.5875
175+ $1.1736 $205.3800
225+ $1.1344 $255.2400
295+ $1.0171 $300.0445
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Availability: 31,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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