The Infineon Technologies IPA65R190C7XKSA1 is a N-Channel MOSFET transistor from Infineon Technologies.

• Series: CoolMOS™ C7 series
• Package: Through-hole with full pack
• Drain to Source Voltage (Vdss): 650 V
• Continuous Drain Current (Id) @ 25°C: 8A (Tc)
• Maximum On-Resistance (Rds On) @ Id, Vgs: 190mOhm @ 5.7A, 10V
• Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V
• Power Dissipation (Max): 30W (Tc)
• Temperature Range: -55°C to 150°C (TJ)
• Applications: Ideal for use in transistors, FETs, MOSFETs, and other electronic components