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IPA65R310CFD

Part No IPA65R310CFD
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 11.4A TO220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 11.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 440μA
Max Gate Charge 41nC @ 10V
Max Input Capacitance 1100pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 32W (Tc)
Maximum Rds On at Id,Vgs 310 mOhm @ 4.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220 Full Pack
Dimension TO-220-3 Full Pack
Win Source Part Number 068957-IPA65R310CFD
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPA65R310CFD CAD Model

Description

The Infineon Technologies 068957-IPA65R310CFD is an N-Channel MOSFET with a maximum drain-source breakdown voltage of 650V and a continuous drain current of 11.4A @ 25°C.

  • Gate-Source Threshold Voltage: 4.5V @ 440μA
  • Maximum Gate Charge: 41nC @ 10V
  • Maximum Input Capacitance: 1100pF @ 100V
  • Maximum Rds On: 310 mOhm @ 4.4A and 10V
  • Junction Temperature Range: -55°C to 150°C
  • Package: PG-TO220 Full Pack

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $9.7932 $58.7592
15+ $8.0353 $120.5295
23+ $7.7847 $179.0481
31+ $7.5329 $233.5199
40+ $7.2823 $291.2920
54+ $6.5292 $352.5768
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,200 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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