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Same model may have multiple batches, images only for reference.
IPA80R1K4P7 Real Image
Same model may have multiple batches, images only for reference.

IPA80R1K4P7

Part No IPA80R1K4P7
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description POWER FIELD-EFFECT TRANSISTOR
Datasheet
IPA80R1K4P7 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 70µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 250 pF @ 500 V
Power Dissipation (Max) 24W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-31 Full Pack
Package / Case TO-220-3 Full Pack
Standard Package 1 pcs
HTSUS 0000.00.0000
Win Source Part Number 874655-IPA80R1K4P7
Ultra Librarian 3D Model Ultra Librarian IPA80R1K4P7 CAD Model

Description

The IPA80R1K4P7 is a N-Channel MOSFET transistor from Infineon Technologies. It is part of the CoolMOS™ series, which is known for its low conduction and switching losses.

  • Drain to Source Voltage: 800V
  • Continuous Drain Current: 4A
  • Maximum On-Resistance: 1.4Ω @ 1.4A and 10V
  • Maximum Gate-Source Threshold Voltage: 3.5V @ 70μA
  • Maximum Power Dissipation: 24W
  • Mounting Type: Through-Hole
  • Package: TO-220-3 Full Pack

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $3.0144 $51.2448
41+ $2.4734 $101.4094
63+ $2.3961 $150.9543
87+ $2.3188 $201.7356
112+ $2.2415 $251.0480
150+ $2.0096 $301.4400
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Availability: 41,490 pieces
MOQ: 17 pcs
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