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Same model may have multiple batches, images only for reference.
IPAW60R380CE Real Image
Same model may have multiple batches, images only for reference.

IPAW60R380CE

Part No IPAW60R380CE
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V TO220-3
Datasheet
IPAW60R380CE Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 320μA
Max Gate Charge 32nC @ 10V
Max Input Capacitance 700pF @ 100V
Maximum Gate-Source Voltage ±20V
FET Feature Super Junction
Power Dissipation (Max) 31W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 3.8A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220 Full Pack
Dimension TO-220-3 Full Pack
Win Source Part Number 205220-IPAW60R380CE
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPAW60R380CE CAD Model

Description

The Infineon Technologies 205220-IPAW60R380CE is a MOSFET that is designed for use in power management applications.

  • Feature: Super junction FET
  • Polarity: N-channel
  • Maximum Power Dissipation: 31W (Tc)
  • Drain-Source Breakdown Voltage: 600V
  • Mounting: Through hole
  • Package: PG-TO220 Full Pack
  • Dimension: TO-220-3 Full Pack
  • Maximum Rds On at Id,Vgs: 380 mOhm @ 3.8A, 10V
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7461 $52.2270
165+ $0.6122 $101.0130
255+ $0.5931 $151.2405
350+ $0.5740 $200.9000
455+ $0.5548 $252.4340
605+ $0.4974 $300.9270
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,100 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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