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Same model may have multiple batches, images only for reference.
IPB048N06LGATMA1 Real Image
Same model may have multiple batches, images only for reference.

IPB048N06LGATMA1

Part No IPB048N06LGATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 100A TO-263
Datasheet
IPB048N06LGATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 270μA
Max Gate Charge 225nC @ 10V
Max Input Capacitance 7600pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 4.4 mOhm @ 100A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 133978-IPB048N06LGATMA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPB048N06LGATMA1 CAD Model

Description

The Infineon Technologies IPB048N06LGATMA1 is a N-channel MOSFET transistor that is designed to work in surface mount device (SMD) mounting.

  • Mounting: Surface mount device (SMD)
  • Power Dissipation (Max): 300W
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current at 25°C: 100A (Tc)
  • Gate-Source Threshold Voltage: 2V @ 270μA
  • Max Gate Charge: 225nC @ 10V
  • Maximum Rds On at Id,Vgs: 4.4 mOhm @ 100A, 10V
  • Category: Discrete Semiconductor Products
  • Popularity: Popular in the market
  • Status: Obsolete (EOL) component
  • Temperature Range: -55°C to 175°C (TJ)
  • Packaging: Reel - TR
  • Case/Package: PG-TO263-2
  • Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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114+ $3.0469 $347.3466
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