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IPB057N06NATMA1

Part No IPB057N06NATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 17A TO263-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 17A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 2.8V @ 36μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 2000pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3W (Ta), 83W (Tc)
Maximum Rds On at Id,Vgs 5.7 mOhm @ 45A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1000222-IPB057N06NATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPB057N06NATMA1 CAD Model

Description

The Infineon Technologies IPB057N06NATMA1 is a high-performance N-channel MOSFET that is commonly used in various electronic applications.

  • Maximum Power Dissipation: 3W (Ta), 83W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Popularity: medium
  • Supply and Demand Status: balance
  • Maximum Rds On @ Id, Vgs: 5.7 mOhm @ 45A, 10V
  • Gate-Source Threshold Voltage: 2.8V @ 36μA

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.9032 $66.6120
75+ $1.5617 $117.1275
115+ $1.5128 $173.9720
160+ $1.4641 $234.2560
205+ $1.4153 $290.1365
275+ $1.2689 $348.9475
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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