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Same model may have multiple batches, images only for reference.
IPB05N03LB G Real Image
Same model may have multiple batches, images only for reference.

IPB05N03LB G

Part No IPB05N03LB G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 80A TO-263
Datasheet
IPB05N03LB G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 40μA
Max Gate Charge 25nC @ 5V
Max Input Capacitance 3209pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 94W (Tc)
Maximum Rds On at Id,Vgs 5 mOhm @ 60A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 100404-IPB05N03LB G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPB05N03LB G CAD Model

Description

The Infineon Technologies IPB05N03LB G is an N-channel MOSFET with a maximum drain-source breakdown voltage of 30V and a continuous drain current of 80A (Tc).

  • Maximum Rds On: 5 mOhm @ 60A and 10V
  • Gate-Source Threshold Voltage: 2V @ 40μA
  • Package: PG-TO263-3-2
  • Maximum Power Dissipation: 94W (Tc)
  • Status: obsolete (EOL)
  • Popularity: medium
  • Supply and demand status: balance

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16+ $22.7847 $364.5552
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