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Same model may have multiple batches, images only for reference.
IPB08CN10NG Real Image
Same model may have multiple batches, images only for reference.

IPB08CN10NG

Part No IPB08CN10NG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 95A TO263-3
Datasheet
IPB08CN10NG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 95A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 130μA
Max Gate Charge 100nC @ 10V
Max Input Capacitance 6660pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 167W (Tc)
Maximum Rds On at Id,Vgs 8.2 mOhm @ 95A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 068968-IPB08CN10NG
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPB08CN10NG CAD Model

Description

The Infineon Technologies IPB08CN10NG is a N-Channel MOSFET transistor with a drain-source breakdown voltage of 100V and a maximum continuous drain current of 95A @ 25°C.

  • Package: PG-TO263-3
  • Maximum Power Dissipation: 167W (Tc)
  • Maximum Rds On at Id,Vgs: 8.2 mOhm @ 95A, 10V
  • Drive Voltage: 10V
  • Gate-Source Threshold Voltage: 4V @ 130μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 100nC @ 10V
  • Supply and demand status: balanced

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Quantity Unit Price Ext. Price
35+ $1.6667 $58.3345
85+ $1.3675 $116.2375
135+ $1.3248 $178.8480
185+ $1.2821 $237.1885
235+ $1.2393 $291.2355
315+ $1.1111 $349.9965
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Availability: 10,900 pieces
MOQ: 35 pcs
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