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Same model may have multiple batches, images only for reference.
IPB09N03LA Real Image
Same model may have multiple batches, images only for reference.

IPB09N03LA

Part No IPB09N03LA
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 50A D2PAK
Datasheet
IPB09N03LA Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 20μA
Max Gate Charge 13nC @ 5V
Max Input Capacitance 1642pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 63W (Tc)
Maximum Rds On at Id,Vgs 8.9 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 106718-IPB09N03LA
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPB09N03LA CAD Model

Description

The IPB09N03LA is a N-Channel MOSFET manufactured by Infineon Technologies.

  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current: 50A @ 25°C
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id,Vgs: 8.9 mOhm @ 30A, 10V
  • Packaging: PG-TO263-3-2
  • Power Dissipation: 63W (Tc)
  • Status: obsolete (EOL)
  • Popularity: medium
  • Supply and demand status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6567 $59.1030
215+ $0.5388 $115.8420
335+ $0.5220 $174.8700
460+ $0.5052 $232.3920
595+ $0.4883 $290.5385
795+ $0.4377 $347.9715
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Availability: 13,700 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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