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Same model may have multiple batches, images only for reference.
IPB120N04S404ATMA1 Real Image
Same model may have multiple batches, images only for reference.

IPB120N04S404ATMA1

Part No IPB120N04S404ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 120A D2PAK  /  N-Channel 40 V 120A (Tc) 79W (Tc) Surface Mount PG-TO263-3
Datasheet
IPB120N04S404ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 40µA
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4100 pF @ 25 V
Power Dissipation (Max) 79W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number IPB120
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP000952816,2156-IPB120N04S404ATMA1,INFINFIPB120N04S404ATMA1
Standard Package 1,000
Win Source Part Number 1065212-IPB120N04S404ATMA1
Ultra Librarian 3D Model Ultra Librarian IPB120N04S404ATMA1 CAD Model

Description

The Infineon Technologies IPB120N04S404ATMA1 is a N-channel MOSFET transistor that is designed for discrete semiconductor products.

  • Drain to Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id) @ 25°C: 120A (Tc)
  • Rds On (Max) @ 100A, 10V: 3.6mOhm
  • Gate Charge (Qg) @ 10 V: 55 nC
  • Voltage Supply: 10V
  • Temperature Range: -55°C to 175°C
  • Mounting Type: Surface Mount
  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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