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Same model may have multiple batches, images only for reference.
IPB230N06L3G
Same model may have multiple batches, images only for reference.

IPB230N06L3G

Part No IPB230N06L3G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™3
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 23mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 30 V
Power Dissipation (Max) 36W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Standard Package 1,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 969309-IPB230N06L3G
Ultra Librarian 3D Model Ultra Librarian IPB230N06L3G CAD Model

Description

The Infineon Technologies IPB230N06L3G is an N-channel MOSFET transistor from the OptiMOS™3 series.

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™3
  • Application: discrete semiconductor applications
  • Vdss: 60V
  • Id: 30A @ 25°C
  • Rds On (Max): 23mOhm @ 30A and 10V
  • Vgs(th): 2.2V @ 11µA
  • Power Dissipation: 36W (Tc)
  • Mounting: surface mountable
  • Package: TO-263-3, D²Pak
  • Component Status: active

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