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Same model may have multiple batches, images only for reference.
IPB240N03S4LR8ATMA1 Real Image
Same model may have multiple batches, images only for reference.

IPB240N03S4LR8ATMA1

Part No IPB240N03S4LR8ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 240A TO263-7  /  N-Channel 30 V 240A (Tc) 300W (Tc) Surface Mount PG-TO263-7-3
Datasheet
IPB240N03S4LR8ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 240A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.76mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 2.2V @ 230µA
Gate Charge (Qg) (Max) @ Vgs 380 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 26000 pF @ 25 V
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-TO263-7-3
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Base Product Number IPB240
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP000952928
Standard Package 1,000
Win Source Part Number 1065217-IPB240N03S4LR8ATMA1
Ultra Librarian 3D Model Ultra Librarian IPB240N03S4LR8ATMA1 CAD Model

Description

The IPB240N03S4LR8ATMA1 is a MOSFET transistor from Infineon Technologies.

  • FET Type: N-channel FET
  • Drain to Source Voltage: 30V
  • Continuous Drain Current @ 25°C: 240A
  • On-Resistance: 0.76mOhm
  • Gate Charge: 380nC @ 10V
  • Series: Automotive, AEC-Q101, OptiMOS™
  • Application: Automotive
  • Package: TO-263-7, D²Pak
  • Leads: 6 leads and a tab

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