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Same model may have multiple batches, images only for reference.
IPB260N06N3G
Same model may have multiple batches, images only for reference.

IPB260N06N3G

Part No IPB260N06N3G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™3
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 25.7mOhm @ 27A, 10V
Vgs(th) (Max) @ Id 4V @ 11µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 30 V
Power Dissipation (Max) 36W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 965544-IPB260N06N3G
Ultra Librarian 3D Model Ultra Librarian IPB260N06N3G CAD Model

Description

The IPB260N06N3G is a MOSFET transistor from Infineon Technologies.

  • Type: N-Channel MOSFET
  • Drain to Source Voltage: 60V
  • Continuous Drain Current: 27A @ 25°C
  • Rds On: 25.7mOhm @ 27A and 10V
  • Gate Charge: 15nC @ 10V
  • Input Capacitance: 1200pF @ 30V
  • Maximum Operating Temperature: 175°C
  • Status: Active
  • Application: Transistor

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3132 $59.0940
110+ $1.0776 $118.5360
170+ $1.0439 $177.4630
230+ $1.0103 $232.3690
300+ $0.9766 $292.9800
400+ $0.8755 $350.2000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,750 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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