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Same model may have multiple batches, images only for reference.
IPB320N20N3 G Real Image
Same model may have multiple batches, images only for reference.

IPB320N20N3 G

Part No IPB320N20N3 G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 34A TO263-3
Datasheet
IPB320N20N3 G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 200V
Current - Continuous Drain (Id) @ 25°C 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 90μA
Gate Charge (Qg) (Maximum) @ Vgs 29nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2350pF @ 100V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 136W (Tc)
Rds On (Maximum) @ Id, Vgs 32 mOhm @ 34A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package PG-TO263-2
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 776850-IPB320N20N3 G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPB320N20N3 G CAD Model

Description

The Infineon Technologies IPB320N20N3 G is an OptiMOS MOSFET type device, manufactured by Infineon Technologies.

  • Current Continuous Drain (Id): 34A (Tc)
  • Maximum Drain-Source Voltage: 200V
  • Operating Temperature Range: -55°C to 175°C
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Mounting: SMD
  • Gate Charge @ 10V: 29nC
  • Input Capacitance (Ciss) (Maximum) @ Vds: 2350pF @ 100V
  • Maximum Power Dissipation (Tc): 136W
  • Maximum Rds On @ 34A, 10V: 32 mOhm
  • Halogen-Free: Yes
  • Popularity: Medium
  • Supply and Demand Status: Limited

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Quantity Unit Price Ext. Price
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52+ $1.9363 $100.6876
80+ $1.8758 $150.0640
111+ $1.8153 $201.4983
143+ $1.7548 $250.9364
191+ $1.5732 $300.4812
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