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Same model may have multiple batches, images only for reference.
IPB50R250CP Real Image
Same model may have multiple batches, images only for reference.

IPB50R250CP

Part No IPB50R250CP
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 250mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 520µA
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1420 pF @ 100 V
Power Dissipation (Max) 114W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Standard Package 1,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 603361-IPB50R250CP
Ultra Librarian 3D Model Ultra Librarian IPB50R250CP CAD Model

Description

The CoolMOS™ 603361-IPB50R250CP is a single N-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Drain to Source Voltage (Vdss): 500V
  • Continuous Drain Current (Id): 13A
  • Rds On (Max) @ 7.8A and 10V: 250mOhm
  • Package: TO-263-3
  • Installation: Surface mount
  • Gate Charge (Qg) @ 10V: 36nC
  • Input Capacitance (Ciss) @ 100V: 1420pF
  • Operating Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $6.2562 $62.5620
23+ $5.1333 $118.0659
35+ $4.9730 $174.0550
48+ $4.8126 $231.0048
63+ $4.6521 $293.0823
84+ $4.1709 $350.3556
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