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IPB530N15N3GATMA1

Name: IPB530N15N3GATMA1
Brand: Infineon Technologies
SKU: 460957
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	IPB530N15N3GATMA1
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 150V 21A TO263-3
Datasheet	IPB530N15N3GATMA1 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Reel - TR
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	150V
Continuous Drain Current at 25°C	21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	8V, 10V
Gate-Source Threshold Voltage	4V @ 35μA
Max Gate Charge	12nC @ 10V
Max Input Capacitance	887pF @ 75V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	68W (Tc)
Maximum Rds On at Id,Vgs	53 mOhm @ 18A, 10V
Temperature Range - Operating	-55°C to 175°C (TJ)
Mounting	SMD (SMT)
Case / Package	PG-TO263-2
Dimension	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number	1045803-IPB530N15N3GATMA1
Popularity	Medium
Supply and Demand Status	Sufficient
Ultra Librarian 3D Model	Ultra Librarian IPB530N15N3GATMA1 CAD Model

Alternative Products

Description

The IPB530N15N3GATMA1 is an N-channel MOSFET manufactured by Infineon Technologies.

Mounting Type: SMD (SMT)
Maximum Power Dissipation: 68W (Tc)
Temperature Range: -55°C to 175°C (TJ)
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current: 21A (Tc)
Maximum Rds On (Id, Vgs): 53 mOhm @ 18A, 10V
Gate-Source Threshold Voltage: 4V @ 35μA
Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
14+	$3.6793	$51.5102
34+	$3.0190	$102.6460
52+	$2.9246	$152.0792
71+	$2.8303	$200.9513
92+	$2.7359	$251.7028
123+	$2.4529	$301.7067

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 2,940 pieces

MOQ: 14 pcs

Order Increment : 1 pcs

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IPB530N15N3GATMA1

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