The Infineon Technologies IPB600N25N3GATMA1 is a MOSFET transistor that belongs to the Discrete Semiconductor Products category.

• It comes in a tape & reel package with a standard package of 1,000.
• The device has a Drain to Source Voltage (Vdss) of 250 V and a Current - Continuous Drain (Id) @ 25°C of 25A (Tc).
• The Rds On (Max) @ Id, Vgs is 60mOhm @ 25A, 10V.
• The Infineon Technologies IPB600N25N3GATMA1 has a Gate Charge (Qg) (Max) @ Vgs of 29 nC @ 10 V and an Input Capacitance (Ciss) (Max) @ Vds of 2350 pF @ 100 V.
• It has an ECCN of EAR99 and is REACH unaffected.
• The device has an MSL Level of 1 (Unlimited) and an HTSUS of 8541.29.0095.