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Same model may have multiple batches, images only for reference.
IPB60R160C6 Real Image
Same model may have multiple batches, images only for reference.

IPB60R160C6

Part No IPB60R160C6
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 23.8A TO263
Datasheet
IPB60R160C6 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 23.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 750μA
Max Gate Charge 75nC @ 10V
Max Input Capacitance 1660pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 176W (Tc)
Maximum Rds On at Id,Vgs 160 mOhm @ 11.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 089405-IPB60R160C6
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPB60R160C6 CAD Model

Description

The Infineon Technologies IPB60R160C6 is a MOSFET transistor with an N-channel polarity and a drain-source breakdown voltage of 600V.

  • Maximum Power Dissipation: 176W (Tc)
  • Continuous Drain Current @ 25°C: 23.8A (Tc)
  • Gate-Source Threshold Voltage: 3.5V @ 750μA
  • Maximum Gate Charge: 75nC @ 10V
  • Maximum Rds On @ Id,Vgs: 160 mOhm @ 11.3A, 10V
  • Mounting: Surface
  • Package: PG-TO263-2

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47+ $5.3309 $250.5523
63+ $4.7794 $301.1022
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