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IPB60R199CP

Part No IPB60R199CP
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 16A TO-263
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 660μA
Max Gate Charge 43nC @ 10V
Max Input Capacitance 1520pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 139W (Tc)
Maximum Rds On at Id,Vgs 199 mOhm @ 9.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 017321-IPB60R199CP
Family Name IPB60R199CP
Introduction Date June 19, 2006
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2019
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPB60R199CP CAD Model

Description

The Infineon Technologies IPB60R199CP is a N-Channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current: 16A (Tc)
  • Maximum Rds On @ Id,Vgs: 199 mOhm @ 9.9A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 43nC @ 10V
  • Package: PG-TO263-3-2
  • Mounting: SMD (SMT)
  • Power Dissipation: 139W (Tc)
  • Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.2640 $58.7520
44+ $2.6784 $117.8496
67+ $2.5953 $173.8851
92+ $2.5110 $231.0120
119+ $2.4278 $288.9082
160+ $2.1760 $348.1600
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Availability: 4,521 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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