The IPB60R199CPATMA1 is an N-Channel MOSFET transistor designed for use in single FET applications.

• Drain to Source Voltage (Vdss): 650V
• Continuous Drain Current (Id): 16A (Tc) @ 25°C
• Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V
• Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V
• Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Mounting Technology: SMD (SMT)
• Suitable For: Transistors - FETs, MOSFETs - Single
• Operating Temperature Range: -55°C to 150°C (TJ)
• Recommendation: Not Recommended for New Designs