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Same model may have multiple batches, images only for reference.
IPB65R095C7ATMA2 Real Image
Same model may have multiple batches, images only for reference.

IPB65R095C7ATMA2

Part No IPB65R095C7ATMA2
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 24A TO263-3 / N-Channel 650 V 24A (Tc) 128W (Tc) Surface Mount PG-TO263-3
Datasheet
IPB65R095C7ATMA2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Packaging Reel - TR
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 95mOhm @ 11.8A, 10V
Vgs(th) (Max) @ Id 4V @ 590µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2140 pF @ 400 V
Power Dissipation (Max) 128W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Surface Mount
Supplier Device Package PG-TO263-3
Case / Package TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number IPB65R095
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number IPB65R095C7ATMA2CT,IPB65R095C7ATMA2TR,IPB65R095C7ATMA2DKR,SP002447562
Standard Package 1,000
Win Source Part Number 1325352-IPB65R095C7ATMA2
Ultra Librarian 3D Model Ultra Librarian IPB65R095C7ATMA2 CAD Model

Description

The IPB65R095C7ATMA2 is an N-channel MOSFET transistor from Infineon Technologies.

  • Drain to Source Voltage: 650V
  • Current Continuous Drain: 24A @ 25°C
  • Rds On (Max): 95mOhm @ 11.8A and 10V
  • Gate Charge: 45nC @ 10V
  • Package: PG-TO263-3
  • Operating Temperature Range: -55°C to 150°C

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