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Same model may have multiple batches, images only for reference.
IPB65R380C6ATMA1 Real Image
Same model may have multiple batches, images only for reference.

IPB65R380C6ATMA1

Part No IPB65R380C6ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 10.6A TO263
Datasheet
IPB65R380C6ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 10.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 320μA
Max Gate Charge 39nC @ 10V
Max Input Capacitance 710pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 3.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1045811-IPB65R380C6ATMA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPB65R380C6ATMA1 CAD Model

Description

The Infineon Technologies 433646 is an N-Channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current (25°C): 10.6A @ 25°C
  • Maximum Rds On (Id,Vgs): 380 mOhm @ 3.2A, 10V
  • Case/Package: PG-TO263
  • Temperature Range: -55°C to 150°C
  • Maximum Power Dissipation: 83W (Tc)
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 3.5V @ 320μA
  • Maximum Gate Charge: 39nC @ 10V
  • Maximum Input Capacitance: 710pF @ 100V
  • Lifecycle Status: Active

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