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Same model may have multiple batches, images only for reference.
IPB80N04S4-04 Real Image
Same model may have multiple batches, images only for reference.

IPB80N04S4-04

Part No IPB80N04S4-04
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R / OptiMOS-T2 Power-Transistor
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Infineon Technologies
Win Source Part Number 1186069-IPB80N04S4-04
Manufacturer Homepage www.infineon.com
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name IPB80N04S4-04
Introduction Date April 06, 2010
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IPB80N04S4-04 CAD Model

Description

Infineon Technologies IPB80N04S4-04 is a P-channel MOSFET transistor with a drain-source breakdown voltage of 40V.

  • Mounting style: D-Pak
  • Maximum power dissipation: 57W
  • Maximum continuous drain current: 18A
  • Maximum on-resistance: 110mOhm @ 9.6A and 10V
  • Gate charge: 32nC @ 10V
  • Gate-source voltage: ±20V
  • Applications: automotive and power management applications
  • Temperature range: -55°C to 150°C
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63

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Quantity Unit Price Ext. Price
50+ $1.0187 $50.9350
120+ $0.8359 $100.3080
190+ $0.8098 $153.8620
260+ $0.7836 $203.7360
335+ $0.7575 $253.7625
445+ $0.6792 $302.2440
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