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Same model may have multiple batches, images only for reference.
IPB80N06S3-05 Real Image
Same model may have multiple batches, images only for reference.

IPB80N06S3-05

Part No IPB80N06S3-05
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description OptiMOS-T2 Power-Transistor
Datasheet
IPB80N06S3-05 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Reel - TR
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 55V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 110μA
Gate Charge (Qg) (Maximum) @ Vgs 240nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 10760pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 165W (Tc)
Rds On (Maximum) @ Id, Vgs 5.1 mOhm @ 63A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package PG-TO263-3-2
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1186081-IPB80N06S3-05
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Limited
Family Name IPB80N06S3-05
Introduction Date February 02, 2006
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian IPB80N06S3-05 CAD Model

Description

The Infineon Technologies IPB80N06S3-05 is a MOSFET transistor that is designed for use in power management, alternative energy, and industrial applications.

  • Maximum Drain-Source Voltage: 55V
  • Maximum Continuous Drain Current: 80A @ 25°C
  • On-Resistance: 5.1 mOhm @ 63A, 10V
  • Gate Charge: 240nC @ 10V
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Operating Temperature: -55°C to 175°C (TJ)
  • Status: Obsolete (EOL)

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