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IPB80P04P4L08ATMA1

Part No IPB80P04P4L08ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 40V 80A TO263-3  /  P-Channel 40 V 80A (Tc) 75W (Tc) Surface Mount PG-TO263-3-2
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Package Tape & Reel (TR)
Product Status Not For New Designs
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 2.2V @ 120µA
Gate Charge (Qg) (Max) @ Vgs 92 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 5430 pF @ 25 V
Power Dissipation (Max) 75W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number IPB80P
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP000840208
Standard Package 1,000
Win Source Part Number 1083422-IPB80P04P4L08ATMA1
Ultra Librarian 3D Model Ultra Librarian IPB80P04P4L08ATMA1 CAD Model

Description

The IPB80P04P4L08ATMA1 is a P-Channel MOSFET transistor manufactured by Infineon Technologies. It has a maximum drain-source voltage of 40V and a continuous drain current of 80A (Tc).

  • Channel Type: P-Channel
  • Maximum Drain-Source Voltage: 40V
  • Continuous Drain Current: 80A (Tc)
  • Rds On (Max) @ Id, Vgs: 7.9mOhm @ 80A, 10V
  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3-2
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Supply and Demand Status: Sufficient

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