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IPC028N03L3X1SA1

Name: IPC028N03L3X1SA1
Brand: Infineon Technologies
SKU: 417977
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	IPC028N03L3X1SA1
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 30V SAWN BARE DIE
Datasheet	IPC028N03L3X1SA1 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	30V
Continuous Drain Current at 25°C	2A (Tj)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	2.2V @ 250μA
Maximum Rds On at Id,Vgs	50 mOhm @ 2A, 10V
Mounting	SMD (SMT)
Case / Package	Sawn on foil
Dimension	Die
Win Source Part Number	1003663-IPC028N03L3X1SA1
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IPC028N03L3X1SA1 CAD Model

Alternative Products

Description

The Infineon Technologies IPC028N03L3X1SA1 is a MOSFET transistor with an N-Channel polarity.

Polarity: N-Channel
Category: Discrete Semiconductor Products
Drive Voltage: 10V
Mounting: SMD (SMT)
Maximum Rds On: 50 mOhm @ 2A, 10V
Gate-Source Threshold Voltage: 2.2V @ 250μA
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current: 2A (Tj) @ 25°C
Package: Sawn on foil die
Supply and Demand Status: Balanced

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