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Same model may have multiple batches, images only for reference.
IPD09N03LA G Real Image
Same model may have multiple batches, images only for reference.

IPD09N03LA G

Part No IPD09N03LA G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 50A DPAK
Datasheet
IPD09N03LA G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 20μA
Max Gate Charge 13nC @ 5V
Max Input Capacitance 1642pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 63W (Tc)
Maximum Rds On at Id,Vgs 8.6 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 117341-IPD09N03LA G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPD09N03LA G CAD Model

Description

The Infineon Technologies IPD09N03LA G is a N-channel MOSFET with a drain-source breakdown voltage of 25V and a continuous drain current of 50A at 25°C.

  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current: 50A @ 25°C
  • Rds On: 8.6 mOhm @ 30A, 10V
  • Gate-Source Threshold Voltage: 2V @ 20μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 1642pF @ 15V
  • Maximum Gate Charge: 13nC @ 5V
  • Technology: SMD (SMT)
  • Packaging: Reel - TR
  • Power Dissipation: 63W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)
  • Case/Package: PG-TO252-3
  • Category: Discrete Semiconductor Products
  • Status: obsolete (EOL)

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