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Same model may have multiple batches, images only for reference.
IPD16CN10N G Real Image
Same model may have multiple batches, images only for reference.

IPD16CN10N G

Part No IPD16CN10N G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 53A TO252-3
Datasheet
IPD16CN10N G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 53A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 61μA
Max Gate Charge 48nC @ 10V
Max Input Capacitance 3220pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 100W (Tc)
Maximum Rds On at Id,Vgs 16 mOhm @ 53A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1045854-IPD16CN10N G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPD16CN10N G CAD Model

Description

The 1045854-IPD16CN10N G is an N-channel MOSFET from Infineon Technologies.

  • Package: PG-TO252-3
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 53A @ 25°C
  • On-Resistance: 16 mOhm @ 53A, 10V
  • Gate-Source Threshold Voltage: 4V @ 61μA
  • Maximum Gate Charge: 48nC @ 10V
  • Suitable for: high power switching applications, such as motor control and power supplies.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.1794 $58.9700
120+ $0.9678 $116.1360
185+ $0.9376 $173.4560
255+ $0.9073 $231.3615
330+ $0.8770 $289.4100
445+ $0.7863 $349.9035
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