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Same model may have multiple batches, images only for reference.
IPD50P03P4L11ATMA1 Real Image
Same model may have multiple batches, images only for reference.

IPD50P03P4L11ATMA1

Part No IPD50P03P4L11ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 50A TO252-3
Datasheet
IPD50P03P4L11ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 85μA
Max Gate Charge 55nC @ 10V
Max Input Capacitance 3770pF @ 25V
Maximum Gate-Source Voltage +5V, -16V
Power Dissipation (Max) 58W (Tc)
Maximum Rds On at Id,Vgs 10.5 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 117776-IPD50P03P4L11ATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPD50P03P4L11ATMA1 CAD Model

Description

The Infineon Technologies IPD50P03P4L11ATMA1 is a P-Channel MOSFET designed for discrete semiconductor products.

  • Power Dissipation: 58W (Tc)
  • Continuous Drain Current: 50A (Tc) @ 25°C
  • Popularity: Medium demand
  • Supply and Demand Status: Balanced
  • Product Status: Active
  • Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1880 $53.4600
90+ $1.1128 $100.1520
140+ $1.0752 $150.5280
200+ $1.0000 $200.0000
260+ $0.9625 $250.2500
325+ $0.9249 $300.5925
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 65,890 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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