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Same model may have multiple batches, images only for reference.
IPD60R600P7SE8228AUMA1
Same model may have multiple batches, images only for reference.

IPD60R600P7SE8228AUMA1

Part No IPD60R600P7SE8228AUMA1
Manufacturer Infineon Technologies
Catalog Transistors – FETs, MOSFETs – Single
Description MOSFET N-CH 600V 6A TO252-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Package Tape & Reel (TR);Cut Tape (CT)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id 4V @ 80µA
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 363 pF @ 400 V
Power Dissipation (Max) 30W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Ultra Librarian 3D Model Ultra Librarian IPD60R600P7SE8228AUMA1 CAD Model

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